• Chinese Optics Letters
  • Vol. 14, Issue 11, 113101 (2016)
Huanfeng Zhu1, Jing Li1、2、*, Kun Chen1, Xinyu Yi1, Shuai Cheng1, Yafei Yuan1, and Fuxi Gan1
Author Affiliations
  • 1Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
  • 2Key Laboratory of Micro and Nano Photonic Structure (Ministry of Education), Fudan University, Shanghai 200433, China
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    DOI: 10.3788/COL201614.113101 Cite this Article Set citation alerts
    Huanfeng Zhu, Jing Li, Kun Chen, Xinyu Yi, Shuai Cheng, Yafei Yuan, Fuxi Gan. Regulation of the magnetic behavior by adjusting oxygen stoichiometry in ZrOx film[J]. Chinese Optics Letters, 2016, 14(11): 113101 Copy Citation Text show less
    (a) Magnetization versus magnetic field curves at RT for all samples. (b) Magnetic hysteresis loop for 8 sccm sample at temperatures of 5 and 300 K.
    Fig. 1. (a) Magnetization versus magnetic field curves at RT for all samples. (b) Magnetic hysteresis loop for 8 sccm sample at temperatures of 5 and 300 K.
    Wide scan XPS spectra for ZrOx films.
    Fig. 2. Wide scan XPS spectra for ZrOx films.
    (a) Zr 3d XPS spectra and (b) O 1s XPS spectra for ZrOx films.
    Fig. 3. (a) Zr 3d XPS spectra and (b) O 1s XPS spectra for ZrOx films.
    PL spectra of ZrOx films measured at RT. The inset shows an enlarged visible wavelength region of 450–580 nm.
    Fig. 4. PL spectra of ZrOx films measured at RT. The inset shows an enlarged visible wavelength region of 450–580 nm.
    2×2×2 supercell of monoclinic ZrO2. The red and cyan spheres represent the O and Zr atoms, respectively. The positions of Zr atoms substituted by O atoms are denoted by 1 and 2, while the O interstitials are marked by 3 and 4.
    Fig. 5. 2×2×2 supercell of monoclinic ZrO2. The red and cyan spheres represent the O and Zr atoms, respectively. The positions of Zr atoms substituted by O atoms are denoted by 1 and 2, while the O interstitials are marked by 3 and 4.
    DOS and PDOS of the (a)–(b) pure m-ZrO2, (c)–(d) 1.6%, and (e)–(f) 3% oxygen interstitial defects in m-ZrO2. The vertical dotted line stands for the Fermi level.
    Fig. 6. DOS and PDOS of the (a)–(b) pure m-ZrO2, (c)–(d) 1.6%, and (e)–(f) 3% oxygen interstitial defects in m-ZrO2. The vertical dotted line stands for the Fermi level.
    DOS and PDOS of m-ZrO2 with OZr concentration of (a)–(b) 3%, (c)–(d) 6%, and (e)–(f) 9%. The vertical dotted line stands for the Fermi level.
    Fig. 7. DOS and PDOS of m-ZrO2 with OZr concentration of (a)–(b) 3%, (c)–(d) 6%, and (e)–(f) 9%. The vertical dotted line stands for the Fermi level.
    Huanfeng Zhu, Jing Li, Kun Chen, Xinyu Yi, Shuai Cheng, Yafei Yuan, Fuxi Gan. Regulation of the magnetic behavior by adjusting oxygen stoichiometry in ZrOx film[J]. Chinese Optics Letters, 2016, 14(11): 113101
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