[1] Iwaya M, Terao S, Sano T, Takanami S, Ukai T, Nakamura R, Kamiyama S, Amano H, Akasaki I. High-efficiency GaN/AlxGa1 - xN multi-quantum-well light emitter grown on lowdislocation density AlxGa1 - xN. Physica Status Solidi A: Applied Research, 2001, 188(1): 117-120
[2] Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M, Chocho K. Present status of InGaN/GaN/AlGaN-based laser diodes. Journal of Crystal Growth, 1998, 189-190: 820-825
[3] Ponce F A, Bour D P. Nitride-based semiconductors for blue and green light-emitting devices. Nature, 1997, 386(6623): 351-359
[4] Munoz E, Monroy E, Pau J L, Calle F, Omnes F, Gibart P. III nitrides and UV detection. Journal of Physics: Condensed Matter, 2001, 13(32): 7115-7137
[5] Zhang S K, Wang W B, Yun F, He L, Morko H, Zhou X, Tamargo M, Alfano R R. Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells. Applied Physics Letters, 2002, 81(24): 4628-4630
[6] Chang P C, Yu C L. InGaN/GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer. Applied Physics Letters, 2007, 91(14): 141113
[7] Jhou Y D, Chen C H, Chuang RW, Chang S J, Su Y K, Chang P C, Chen P C, Hung H,Wang S M, Yu C L. Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures. Solid-State Electronics, 2005, 49(8): 1347-1351
[8] Wu J, Walukiewicz W, Yu K M, Shan W, Ager III J W, Haller E E, Lu H, Schaff W J, Metzger W K, Kurtz S. Superior radiation resistance of In1 - xGaxN alloys: full-solar-spectrum photovoltaic material system. Journal of Applied Physics, 2003, 94(10): 6477-6482
[9] Jani O, Ferguson I, Honsberg C, Kurtz S. Design and characterization of GaN/InGaN solar cells. Applied Physics Letters, 2007, 91(13): 132117
[10] Neufeld C J, Toledo N G, Cruz S C, Iza M, DenBaars S P, Mishra U K. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap. Applied Physics Letters, 2008, 93(14): 143502
[11] Chichibu S F, Wada K, Müllhuser J, Brandt O, Ploog K H, Mizutani T, Setoguchi A, Nakai R, Sugiyama M, Nakanishi H, Korii K, Deguchi T, Sota T, Nakamura S. Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. Applied Physics Letters, 2000, 76(13): 1671-1673
[12] Chiou Y Z. Nitride-based p-i-n bandpass photodetectors. IEEE Electron Device Letters, 2005, 26(3): 172-174