• Frontiers of Optoelectronics
  • Vol. 2, Issue 4, 442 (2009)
Cao MIAO*, Hai LU, Dunjun CHEN, Rong ZHANG, and Youdou ZHENG
Author Affiliations
  • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
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    DOI: 10.1007/s12200-009-0059-z Cite this Article
    Cao MIAO, Hai LU, Dunjun CHEN, Rong ZHANG, Youdou ZHENG. InGaN/GaN multi-quantum-well-based light-emitting and photodetective dual-functional devices[J]. Frontiers of Optoelectronics, 2009, 2(4): 442 Copy Citation Text show less
    References

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    [2] Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M, Chocho K. Present status of InGaN/GaN/AlGaN-based laser diodes. Journal of Crystal Growth, 1998, 189-190: 820-825

    [3] Ponce F A, Bour D P. Nitride-based semiconductors for blue and green light-emitting devices. Nature, 1997, 386(6623): 351-359

    [4] Munoz E, Monroy E, Pau J L, Calle F, Omnes F, Gibart P. III nitrides and UV detection. Journal of Physics: Condensed Matter, 2001, 13(32): 7115-7137

    [5] Zhang S K, Wang W B, Yun F, He L, Morko H, Zhou X, Tamargo M, Alfano R R. Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells. Applied Physics Letters, 2002, 81(24): 4628-4630

    [6] Chang P C, Yu C L. InGaN/GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer. Applied Physics Letters, 2007, 91(14): 141113

    [7] Jhou Y D, Chen C H, Chuang RW, Chang S J, Su Y K, Chang P C, Chen P C, Hung H,Wang S M, Yu C L. Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures. Solid-State Electronics, 2005, 49(8): 1347-1351

    [8] Wu J, Walukiewicz W, Yu K M, Shan W, Ager III J W, Haller E E, Lu H, Schaff W J, Metzger W K, Kurtz S. Superior radiation resistance of In1 - xGaxN alloys: full-solar-spectrum photovoltaic material system. Journal of Applied Physics, 2003, 94(10): 6477-6482

    [9] Jani O, Ferguson I, Honsberg C, Kurtz S. Design and characterization of GaN/InGaN solar cells. Applied Physics Letters, 2007, 91(13): 132117

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    [12] Chiou Y Z. Nitride-based p-i-n bandpass photodetectors. IEEE Electron Device Letters, 2005, 26(3): 172-174

    Cao MIAO, Hai LU, Dunjun CHEN, Rong ZHANG, Youdou ZHENG. InGaN/GaN multi-quantum-well-based light-emitting and photodetective dual-functional devices[J]. Frontiers of Optoelectronics, 2009, 2(4): 442
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