Yttria-stabilized zirconia (YSZ) films have been prepared by electron beam evaporation at different oxygen partial pressures and deposition rates, using the starting material made of 7% (mol fraction) Y2O3 (99.99%) mixed with ZrO2 (99.99%) powder. The residual stress of YSZ films was measured by viewing the substrate deflection using an optical interference method. The influences of oxygen partial pressures and deposition rates on residual stress were studied. The results show that residual stress of all the samples is tensile. The value of stress decreases with the increase of oxygen partial pressure, then increases with the further increase of oxygen pressure, and increases monotonously with deposition rate increase. The thermal stress plays an important role in the total stress. The value of residual stress is influenced by variations of intrinsic stress and extrinsic stress. In addition, the microstructure of the YSZ films was characterized by X-ray diffraction (XRD). The causes of residual stress were given with micro-structure changes.