Fig. 1. (a) Configuration coordinates for the ground state (G) and three lowest excited states (I, II, III) of electron in PbSe quantum dot; (b) Huang-Rhys factors as a function of the radius of quantum dot for six types of intraband relaxation processes.(a) PbSe量子点中电子的基态(G)与3个最低的激发态(I, II, III)位型坐标关系; (b) 6种带内弛豫过程的黄-里斯因子与量子点半径的关系

Fig. 2. Intraband relaxation rates as a function of the radius of PbSe quantum dot at different temperature: (a) 5 K; (b) 300 K.不同温度下, PbSe量子点中带内弛豫率与半径的依赖关系　(a) 5 K; (b) 300 K

Fig. 3. Relaxation rates as a function of the temperature at different radii of quantum dot: (a) ; (b) ; (c) ; (d) ; (e) . 在不同的量子点半径下, 弛豫率与温度的变化关系　(a) ; (b) ; (c) ; (d) ; (e)