Graphene Oxide (GO) was introduced as a hole transport layer material in a planar heterojunction perovskite battery by solution spin coating. The photoelectric conversion efficiencies of the prepared cells based on GO, GO∶(PEDOT: PSS) composite film and GO/PEDOT∶PSS double-layer film as hole transport layer are 1.86%, 7.35%, and 7.69%, respectively. And the efficiency of the control cell based on PEDOT∶PSS as the transport layer is 7.38%. The main reason is that graphene oxide has insulation properties. When graphene oxide as the anode interface layer, the series resistance of the device increases with the thickness of the graphene oxide film increases, thereby reducing the short-circuit current and efficiency of the battery. In order to improve the conductivity of graphene oxide and its work function, the oxidation of graphene oxide was combined with PEDOT: PSS to form a two-hole transport layer. The battery achieves a high efficiency of 7.69%, which proves that this is oxidation is an effective way for graphene to be used in the hole transport layer of perovskite cells.