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    Journals >Chinese Journal of Lasers >Volume 17 >Issue 11 >Page 690 > Article
    • Chinese Journal of Lasers
    • Vol. 17, Issue 11, 690 (1990)
    A new dielectric facet protector and AR film for semiconductor light-emitting devices
    [in Chinese]1 and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese]. A new dielectric facet protector and AR film for semiconductor light-emitting devices[J]. Chinese Journal of Lasers, 1990, 17(11): 690 Copy Citation Text show less

    Abstract

    Experimental results are presented for the first time for sputtered AIN film which is a protector and AR film on the facet of semiconductor light-emitting devices. The technical conditions for obtaing sputtered AIN film and its properties are given.

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    [in Chinese], [in Chinese]. A new dielectric facet protector and AR film for semiconductor light-emitting devices[J]. Chinese Journal of Lasers, 1990, 17(11): 690
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    Paper Information
    Recommended Topics
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