Anti-Stokes stimulated Raman scattering in H2 at low temperatures

Xie Xiaoxiang; J.Schmeer; J. Biesner; K. H. Welge

Journals >Chinese Journal of Lasers >Volume 15 >Issue 12 >Page 719 > Article

Chinese Journal of Lasers
Vol. 15, Issue 12, 719 (1988)

Anti-Stokes stimulated Raman scattering in H₂ at low temperatures

Xie Xiaoxiang¹, J.Schmeer², J. Biesner², and K. H. Welge²

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¹[in Chinese]

²[in Chinese]

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Xie Xiaoxiang, J.Schmeer, J. Biesner, K. H. Welge. Anti-Stokes stimulated Raman scattering in H₂ at low temperatures[J]. Chinese Journal of Lasers, 1988, 15(12): 719 Copy Citation Text

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Abstract

The anti-Stokes stimulated Raman scattering (ASSRS) processes at 266 mn and 283nm in compressed hydrogen at low temperatures are observed. By lowering the gas temperature to 78K, the intensities of 2nd to 6th order anti-Stokes (AS) scattering are increased comparing with the results at room temperatures.

Xie Xiaoxiang, J.Schmeer, J. Biesner, K. H. Welge. Anti-Stokes stimulated Raman scattering in H₂ at low temperatures[J]. Chinese Journal of Lasers, 1988, 15(12): 719

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