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Journals >Chinese Journal of Lasers >Volume 31 >Issue 3 >Page 342 > Article

Chinese Journal of Lasers
Vol. 31, Issue 3, 342 (2004)

Imitation of the Instantaneous Change Behaviors of Photoconductive Detectors

[in Chinese]^1、2、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Imitation of the Instantaneous Change Behaviors of Photoconductive Detectors[J]. Chinese Journal of Lasers, 2004, 31(3): 342 Copy Citation Text

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References

[3] W. Scott. Electron mobility in Hg1-xCdxTe [J]. J. Appl. Phys., 1972, 43(3):1055～1062

CLP Journals

[1] Li Li, Lu Qisheng. Numerical Simulation of Dynamic Response of PC-Type HgCdTe Detector Irradiated by in-Band and Out-of-Band Laser Beams[J]. Acta Optica Sinica, 2008, 28(10): 1952

[2] Zhao Hongyu, Wei Zhi, Jin Guangyong. Numerical Research on Photodiode Damage by Multi-Pulsed Laser Irradiation[J]. Laser & Optoelectronics Progress, 2017, 54(4): 40401

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Imitation of the Instantaneous Change Behaviors of Photoconductive Detectors[J]. Chinese Journal of Lasers, 2004, 31(3): 342

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