• High Power Laser and Particle Beams
  • Vol. 32, Issue 7, 073001 (2020)
Jianbing Li1, Pengfei Lin1, Baoliang Hao2, and Jianbang Sun1
Author Affiliations
  • 1PLA Strategic Support Force Information Engineering University, Zhengzhou 450001, China
  • 2Beijing Vacuum Electronics Research Institute, Beijing 100015, China
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    DOI: 10.11884/HPLPB202032.200095 Cite this Article
    Jianbing Li, Pengfei Lin, Baoliang Hao, Jianbang Sun. Overview of development of microwave power amplifiers[J]. High Power Laser and Particle Beams, 2020, 32(7): 073001 Copy Citation Text show less
    Mean time to failure (MTTF) of vacuum power device
    Fig. 1. Mean time to failure (MTTF) of vacuum power device
    Composition of microwave power module(MPM)
    Fig. 2. Composition of microwave power module(MPM)
    Current frequency power distribution of MPM
    Fig. 3. Current frequency power distribution of MPM
    M1871 MPM
    Fig. 4. M1871 MPM
    4~8 GHz 50 W MPM of Beijing Vacuum Electronics Research Institute
    Fig. 5. 4~8 GHz 50 W MPM of Beijing Vacuum Electronics Research Institute
    Ku band 500 W double tube pulse MPM
    Fig. 6. Ku band 500 W double tube pulse MPM
    TH24512 MPM
    Fig. 7. TH24512 MPM
    Ultra-thin EPC components of Information Engineering University
    Fig. 8. Ultra-thin EPC components of Information Engineering University
    Saturated output power vs frequency of current microwave power amplifiers
    Fig. 9. Saturated output power vs frequency of current microwave power amplifiers
    serialfrequency/GHzpower/Wduty cycle/%efficiency/%manufacturermain application
    1231~2355~255011L3radar(SAR)
    290.6~91.430050L3seeker,radar
    93~9550CW15CPIradar communication
    W band(bandwidth 5 GHz)1502020CETC12radar communication
    W band(bandwidth 0.5 GHz)20010THALESseeker,radar
    381~86200CW50L3communication
    447~52.4125CW35L3communication
    47~52.4120CW30CETC12communication
    43.5~45.5200CW46L3communication
    534~3610005040L3seeker,radar
    32~377005040CETC12radar
    27.5~31500CW57L3/NEC/CPIcommunication
    27.5~31300CW45CETC12communication
    Table 1. Typical millimeter wave products
    frequency/THzcathode voltage/kVbeam current/mAsaturated gain/dBpeak power/mW3 dB bandwidth/GHzduty cycle/%
    0.649.74.8222591510
    0.679.63.11771150.5
    0.8511.42.822391511
    1.0312.12.3202950.3
    Table 2. THz TWT test results
    materialband gap width/eV electron mobility/ (cm2·V−1·s−1saturated electron velocity/ (107 cm·s−1breakdown field strength/ (MV·cm·−1thermal conductivity/ (W·cm−1·K−1relative permittivity Baliga value (high frequency) Baliga value (low frequency)
    Si1.121 40010.31.511.411
    GaAs1.428 50020.40.513.11116
    4H-SiC3.251 020234.99.773600
    GaN3.451 000(GaN) 2 000(AlGaN/GaN) 2.73.328.91801 450
    Table 3. Main characteristic parameters of several semiconductor materials
    Jianbing Li, Pengfei Lin, Baoliang Hao, Jianbang Sun. Overview of development of microwave power amplifiers[J]. High Power Laser and Particle Beams, 2020, 32(7): 073001
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