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    Journals >Chinese Journal of Lasers >Volume 8 >Issue 11 >Page 49 > Article
    • Chinese Journal of Lasers
    • Vol. 8, Issue 11, 49 (1981)
    Optimum alloying condition in ohmic contact
    Xie Jingshan
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  • [in Chinese]
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    Xie Jingshan. Optimum alloying condition in ohmic contact[J]. Chinese Journal of Lasers, 1981, 8(11): 49 Copy Citation Text show less

    Abstract

    The optimum alloying condition in ohmic contact of GaAlAs/GaAs and InGaAsP/InP semiconductor lasers is described in detail, and theoretical analysis on the point of view of metallization is given.
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    Xie Jingshan. Optimum alloying condition in ohmic contact[J]. Chinese Journal of Lasers, 1981, 8(11): 49
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    Paper Information
    Recommended Topics
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