[1] Du X Q,Zong Z Y,Chang B K. Acta Photonica Sinica,2004,33(8):939～941
[2] Du Y J,Du X Q,Chang B K,et al. Acta Photonica Sinica,2005,34(12):1792～1794
[3] Rodway D C,Allenson M B. In situ surface study of the activating layer on GaAs(Cs,O) photocathodes. Journal of Physics D: Applied Physics,1986,19(7): 1353～1371
[4] Phillips C C,Hughes A E,Sibbett W. Quantitative XPS surfaces chemical analysis and direct measurement of the temporal response times of glass-bonded NEA GaAs transmission photocathodes. Journal of Physics D:Applied Physics,1984,17(8):1713～1725
[5] Du X Q,Chang B K. Angle-dependent XPS study of the mechanisms of “high-low temperature” activation of GaAs photocathode. Applied Surface Science,2005,251(1-4) : 267～272
[6] Chang B K,Du X Q,Liu L,et al. The automatic recording system of dynamic spectral response and its applications. Proc of SPIE,2003,5209:209～218
[7] Du X Q,Chang B K,Wang G H,et al. Acta Photonica Sinica,2003,32(7) :826～829
[8] Turnbull A A,Evans G B. Photoemission from GaAsCs-O. Journal of physics D: Applied Physics,1968,1(2):155～160
[9] Fisher D G. The effect of Cs-O activation temperature on the surface escape probability of NEA (In,Ga) As photocathodes. IEEE Transaction on Electron Device,1974,ED-21(8):541～542
[10] Su C Y,Chye P W,Pianetta P,et al. Oxygen adsorption on Cs covered GaAs(110) surfaces. Surface Science,1979,86(7):894～899
[11] Su C Y,Lindau I. Spicer W E. Photoemission studies of the oxidation of Cs identification of the multiple structures of oxygen species. Chemical Physics Letters,1982,87(6):523～527
[12] Su C Y,Spicer W E,Lindau I. Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surface. Journal of Applied Physics,1983,54(3):1413～1422
