Based on the“cold processing”property of picosecond laser, the investigation on the hybrid technique using picosecond laser irradiation followed by short-time chemical corrosion (NaOH solution, mass fraction: 4%, lass than 3 min, water bath: 80 ℃) to fabricate high performance silicon antireflection textures is carried out. Over a broad wavelength range of 400~1000 nm, the average reflectance of the two fabricated novel surface textures, which are the micro-nano hierarchical structure texture and the dome-cone array texture, both reduce to below 10%. Even the average reflection of the former reduces to below 5%. The fabrication can be carried out with high controllability and without using the etch mask and vacuum circumstance. The mechanism of different regulation matching of the laser process parameters and chemical corrosion parameters acting on the formation of the novel antireflection textures is studied. The antireflection mechanism of the textures is also analyzed. Results provide an important guide for laser fabrication of high performance silicon antireflection textures for the application in solar cells and other semiconductor devices in a low-cost and controllable way.