• Optoelectronic Technology
  • Vol. 39, Issue 2, 123 (2019)
SU Lei*, YANG Xiaofei, LI Xinghua, LIU Xu, MOU Xun, and MENG Jia
Author Affiliations
  • [in Chinese]
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    DOI: 10.19453/j.cnki.1005-488x.2019.02.011 Cite this Article
    SU Lei, YANG Xiaofei, LI Xinghua, LIU Xu, MOU Xun, MENG Jia. Mechanism and Improvement on High Temperature Crosstalk in Vehicle TFT LCD Devices Reliability Test[J]. Optoelectronic Technology, 2019, 39(2): 123 Copy Citation Text show less

    Abstract

    The factors of vehicle LCD high temperature crosstalk in reliability test were studied. It was found that the bigger the N+ step remain of TFT channel was, the worse the high temperature crosstalk became. The N+ step remain could be improved by increasing ashing time of N+ etch process. Thickness of gate insulator would also affect the crosstalk. The DOE experiments show that the significant factors affecting reliability crosstalk are N + step remain of TFT channel and thickness of gate insulator.
    SU Lei, YANG Xiaofei, LI Xinghua, LIU Xu, MOU Xun, MENG Jia. Mechanism and Improvement on High Temperature Crosstalk in Vehicle TFT LCD Devices Reliability Test[J]. Optoelectronic Technology, 2019, 39(2): 123
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