• Acta Photonica Sinica
  • Vol. 53, Issue 5, 0553116 (2024)
Gangyi ZHU1,*, Bo NING1, Guoqing QIU1, Chunxiang GUO4..., Ying YANG1, Xin LI1, Binghui LI2, Zheng SHI1, Jun DAI3, Feifei QIN1 and Yongjin WANG1|Show fewer author(s)
Author Affiliations
  • 1College of Telecommunications and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,China
  • 2Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China
  • 3College of Science,Jiangsu University of Science and Technology,Zhenjiang 212003,China
  • 4Jiangsu Leuven Instruments Co.,Ltd.,Pizhou221300,China
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    DOI: 10.3788/gzxb20245305.0553116 Cite this Article
    Gangyi ZHU, Bo NING, Guoqing QIU, Chunxiang GUO, Ying YANG, Xin LI, Binghui LI, Zheng SHI, Jun DAI, Feifei QIN, Yongjin WANG. InGaN/GaN Quantum Well LED Based on Floating Microdisk Cavity[J]. Acta Photonica Sinica, 2024, 53(5): 0553116 Copy Citation Text show less
    References

    [1] Yichen XU, Zhimin WANG, Fengfeng ZHANG et al. High-efficiency spectral-beam-combined 930 nm diode laser source. Chinese Physics Letters, 37, 054203-054207(2020).

    [2] Zhongqiu XING, Yongjie ZHOU, Yuhuai LIU et al. Reduction of electron leakage of AlGaN-based deep ultraviolet laser diodes using an inverse-trapezoidal electron blocking layer. Chinese Physics Letters, 37, 027302-027307(2020).

    [3] Fangjin NING, Zhiyong LI, Rongqing TAN et al. Diode pumped rubidium laser based on etalon effects of alkali cell windows. Chinese Physics Letters, 37, 034203-034206(2020).

    [4] TO Chaphang, Waiyuen FU, Kwaihei LI et al. GaN microdisk with direct coupled waveguide for unidirectional whispering-gallery mode emission. Optics Letters, 45, 791-794(2020).

    [5] L P AVAKYANTS, P Y BOKOV, A V CHERVYAKOV et al. Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures. Semiconductors, 44, 1090-1095(2010).

    [6] Yiyun ZHANG, Xuhui ZHANG, Kwaihei LI et al. Advances in III‐nitride semiconductor microdisk lasers. Physica Status Solidi (a), 212, 960-973(2015).

    [7] S CHANG, N B REX, RICHARD K CHANG et al. Erratum: stimulated emission and lasing in whispering gallery modes of gan microdisk cavities. Applied Physics Letters, 75, 3719(1999).

    [8] Yiyun ZHANG, Jianan HUANG, Kwaihei LI et al. Influence of strain on emission from GaN-on-Si microdisks. Journal of Physics D: Applied Physics, 49, 375103-375111(2016).

    [9] Yang MEI, Rongbin XU, Huan XU et al. A comparative study of thermal characteristics of GaN-based vcsels with three different typical structures. Semiconductor Science and Technology, 33, 015016-015041(2017).

    [10] Jianwang JIANG, Shaobo FANG, Ziyue ZHANG et al. Monolithic 0-f scheme-based frequency comb directly driven by a high-power ti: Sapphire oscillator. Chinese Physics Letters, 37, 054201-054205(2020).

    [11] RA Y , C LEE. Core-shell tunnel junction nanowire white-light-emitting diode. Nano Letters, 20, 4162-4168(2020).

    [12] Qi GUO, Ding LI, Qilin HUA et al. Enhanced heat dissipation in gallium nitride-based light-emitting diodes by piezo-phototronic effect. Nano Letters, 21, 4062-4070(2021).

    [13] M NEUKOM, S ZUFLE, S JENATSCH et al. Opto-electronic characterization of third-generation solar cells. Science and Technology of Advanced Materials, 19, 291-316(2018).

    [14] T KATSUNO, T MANAKA, T ISHIKAWA et al. Current collapse imaging of schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement. Applied Physics Letters, 104, 252112-252117(2014).

    [15] C RODRIGUE-FERNÁNDEZ, M ALMOKHTAR, W IBARRA-HERNÁNDEZ et al. Isotopic heft on the b1l silent mode in ultra-narrow gallium nitride nanowires. Nano Letters, 18, 5091-5097(2018).

    [16] Pengfei TIAN, Xiaoyan LIU, Suyu YI et al. High-speed underwater optical wireless communication using a blue GaN-based micro-Led. Optics Express, 25, 1193-1201(2017).

    [17] B MITCHELL, V DIEROLF, T GREGORKIEWICZ et al. Perspective: toward efficient GaN-based red light emitting diodes using europium doping. Journal of Applied Physics, 123, 160901-160906(2018).

    [18] H LEE, J CHOI, S LEE et al. Monolithic flexible vertical GaN light-emitting diodes for a transparent wireless brain optical stimulator. Advanced Materials, 30, 1800649-1800659(2018).

    [19] Yi SUN, Kun ZHOU, Meixin FENG et al. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si. Light-Science & Applications, 7, 13-20(2018).

    [20] M MALI, C TARDY, M ROSSETTI et al. InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers. Applied Physics Express, 9, 061004-061007(2016).

    [21] A KAFAR, A SAKAKI, R ISHII et al. Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga) laser-like structure studied by synchrotron radiation microbeam X-ray diffraction. Photonics Research, 9, 299-307(2021).

    [22] M TAHER, S AL-YOUSIF, N M AHMED. Atomistic modeling of InGaN/GaN quantum dots-in-nanowire for graded surface-emitting low-threshold, blue exciton laser. Results in Physics, 20, 103732-103743(2021).

    [23] J JOHNSON, H CHOI, K KNUTSEN et al. Single gallium nitride nanowire lasers. Nature Materials, 1, 106-110(2002).

    [24] J S BARNARD, J SHARP, J R TONG et al. High-resolution three-dimensional imaging of dislocations. Science, 313, 319-319(2006).

    [25] M KURAMOTO, S KOBAYASHI, T AKAGI et al. High-output-power and high-temperature operation of blue GaN-based vertical-cavity surface-emitting laser. Applied Physics Express, 11, 112101-112105(2018).

    [26] J T LEONARD, B P YONKEE, D A COHEN et al. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture. Applied Physics Letters, 108, 031111-031117(2016).

    [27] J T LEONARD, E C YOUNG, B P YONKEE et al. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact. Applied Physics Letters, 107, 091105-091109(2015).

    [28] C FORMAN, S LEE, E YOUNG et al. Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact. Applied Physics Letters, 112, 111106-111111(2018).

    [29] T CHANG, E HASHEMI, Kuobin HONG et al. Electrically injected GaN-based vertical-cavity surface-emitting lasers with TiO2 high-index-contrast grating reflectors. ACS Photonics, 7, 861-866(2020).

    [30] Jin WANG, Meixin FENG, Rui ZHOU et al. Continuous-wave electrically injected GaN-on-Si microdisk laser diodes. Optics Express, 28, 12201-12208(2020).

    Gangyi ZHU, Bo NING, Guoqing QIU, Chunxiang GUO, Ying YANG, Xin LI, Binghui LI, Zheng SHI, Jun DAI, Feifei QIN, Yongjin WANG. InGaN/GaN Quantum Well LED Based on Floating Microdisk Cavity[J]. Acta Photonica Sinica, 2024, 53(5): 0553116
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