• Journal of Terahertz Science and Electronic Information Technology
  • Vol. 20, Issue 6, 549 (2022)
WANG Haiyang1、2、3、*, ZHENG Qiwen1、2, CUI Jiangwei1、2, LI Xiaolong1、2, LI Yudong1、2, LI Bo4, and GUO Qi1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    DOI: 10.11805/tkyda2021418 Cite this Article
    WANG Haiyang, ZHENG Qiwen, CUI Jiangwei, LI Xiaolong, LI Yudong, LI Bo, GUO Qi. DSOI total dose-effect model and back-bias control model[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(6): 549 Copy Citation Text show less
    References

    [1] FLEETWOOD D M. Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices[J]. IEEE Transactions on Nuclear Science, 2013,60(3):1706-1730.

    [2] REZZAK N,ZHANG E X,ALLES M L,et al. Total-ionizing-dose radiation response of 32 nm partially and 45 nm fully-depleted SOI devices[[C]// Proceedings of the IEEE International SOI Conference. San Diego,USA:IEEE, 2010:1.

    [3] KUDINA V,CARBAR N,SIMOEN E,et al. Effect of extension architecture on the LF noise of UTBOX SOI MOSFETs[C]// 2015 high-energy proton beam[J]. IEEE Transactions on Nuclear Science, 2014,61(6):2904-2914. International Conference on Noise and Fluctuations(ICNF). Xi'an,China:[s.n.], 2015:1-4.

    [4] REZZAK N. Total-ionizing-dose radiation response of 32 nm partially and 45 nm fully-depleted SOI devices[C]// 2012 IEEE International SOI Conference(SOI). Napa,CA,USA:IEEE, 2012:1-2.

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    [8] GAILLARDIN M,RAINE M,PAILLET P,et al. Radiation effects in advanced SOI devices:new insights into total ionizing dose and Single-Event Effects[C]// 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference(S3S). Monterey,CA:IEEE, 2013:1-2.

    [9] LIU H Y, ANTONY D, HEIKKILA W, et al. Proton-induced upset in SOI CMOS SRAMS[J]. IEEE Transactions on Nuclear Science, 2004,51(6):3475-3479.

    [10] ZHENG Qiwen,CUI Jiangwei,XU Liewei,et al. Total ionizing dose responses of forward body bias ultra-thin body and buried oxide FD-SOI transistors[J]. IEEE Transactions on Nuclear Science, 2019,66(4):1.

    [11] GAO Chuang, ZHAO Xing, ZHAO Kai, et al. DSOI-a novel structure enabling adjust circuit dynamically[J]. Journal of Semiconductors, 2016,37(6):065003.

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    [13] LI B,WU J,GAO Y,et al. The total ionizing dose response of a DSOI 4 Kb SRAM[J]. Microelectronics Reliability, 2017(76):714-718.

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    WANG Haiyang, ZHENG Qiwen, CUI Jiangwei, LI Xiaolong, LI Yudong, LI Bo, GUO Qi. DSOI total dose-effect model and back-bias control model[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(6): 549
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