Fast pulse generation technology based on explosive driven ferroelectric generators

Youcheng Wu; Gaomin Liu; Hongliang He; Jianjun Deng; Wenfeng Dai; Chuanjun Feng

doi:10.11884/HPLPB202234.210471

Journals >High Power Laser and Particle Beams >Volume 34 >Issue 7 >Page 075017 > Article

High Power Laser and Particle Beams
Vol. 34, Issue 7, 075017 (2022)

Fast pulse generation technology based on explosive driven ferroelectric generators

Youcheng Wu, Gaomin Liu, Hongliang He, Jianjun Deng, Wenfeng Dai, and Chuanjun Feng

Author Affiliations

Institute of Fluid Physics, CAEP, Mianyang 621900, China

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DOI: 10.11884/HPLPB202234.210471 Cite this Article

Youcheng Wu, Gaomin Liu, Hongliang He, Jianjun Deng, Wenfeng Dai, Chuanjun Feng. Fast pulse generation technology based on explosive driven ferroelectric generators[J]. High Power Laser and Particle Beams, 2022, 34(7): 075017 Copy Citation Text

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Fig. 1. Circuit schematic of an energy-storage inductor and an EEOS powered by a high current-mode EDFEG

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Fig. 2. Simulation waveforms of inductance current I_L and load voltage U_d without parallel capacitors

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Fig. 3. Simulation waveforms of inductance current and load voltage when a 300 nF capacitor is connected in parallel

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Fig. 4. Circuit schematic of an energy-storage inductor and an EEOS powered by a high voltage-mode EDFEG

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Fig. 5. Simulation waveforms of output current of EDFEG and charging voltage of the capacitor

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Fig. 6. Optimized waveform of load voltage powered by high-voltage mode EDFEG

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Fig. 7. Simulation load voltages U_R for different inductances

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Fig. 8. Experimental inductor current I_L, load voltage U_R and load current I_R

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Fig. 9. Experimental output current I_EDFEG of EDFEG and charging voltage (U_C) of the capacitor

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Fig. 10. Experimental inductor current I_L, diode voltage U_d and diode current I_R powered by the EDFEG

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I₀/kA	I_L/kA	U₀/kV	m×n	A_shock/cm²	I_L/kA	U₀/kV	m×n	A_shock/cm²	I_L/kA	U₀/kV	m×n	A_shock/cm²
I₀/kA	L=0.2 μH				L=1.0 μH				L=2.0 μH
5.0	7.9	5.8	114×1	70	8.3	21.6	114×3	210	8.9	45.8	114×7	490
7.5	11.8	9.7	170×2	204	13.1	28.2	170×4	408	13.4	63.2	170×9	918
15	23.5	17.4	340×3	612	26.2	54.3	340×8	1632	26.5	120.6	340×25	4335

Table 1. Simulation results of the current through the inductance and design parameters of the EDFEG

I₀/kA	N	l/mm	U_d/kV	τ/ns	N	l/mm	U_d/kV	τ/ns	N	l/mm	U_d/kV	τ/ns
I₀/kA	L=0.2 μH				L=1.0 μH				L=2.0 μH
5.0	3	20	58	17	5	60	109	37	5	90	150	60
7.5	5	30	74	15	7	90	160	38	9	130	213	61
15.0	9	50	140	16	14	160	320	36	15	280	434	62

Table 2. Optimized parameters of EEOS and simulation results of the voltage and pulse width

C/nF	U_c/kV	N	l/mm	U_d/kV	τ/ns	N	l/mm	U_d/kV	τ/ns	N	l/mm	U_d/kV	τ/ns
C/nF	U_c/kV	L=0.3 μH				L=0.4 μH				L=1.0 μH
15.1	100	4	90	256	19	4	90	238	22	4	100	182	62
18.7	90	5	90	245	19	4	90	224	24	4	100	176	64
22.7	85	5	90	239	20	5	90	220	26	4	100	172	67

Table 3. Simulation results with EDFEG in high-voltage mode

l/mm	U_d/kV	τ/ns	l/mm	U_d/kV	τ/ns	l/mm	U_d/kV	τ/ns
L=300 nH，N=4			L=400 nH，N=4			L=1000 nH，N=3
80	206	20	80	190	25	90	144	56

Table 4. Simulation results with parameters 75 kV/17.5 nF of the capacitor

item	U_d/kV	t_r/ ns	τ/ns	U_d/kV	t_r/ ns	τ/ns	U_d/kV	t_r/ ns	τ/ns
item	L=298 nH，N=4			L=397 nH，N=4			L=445 nH，N=4
simulation results	193	3.5	19	174	3.7	24	163	4.2	27
experiment results	167	3.6	25	157	3.5	32	147	3.3	39

Table 5. Simulation results and experimental results with parameters 75 kV/17.5 nF of the capacitor

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