[1] ZHANG Bai-jun,EGAWA T,ISHIGAWA H,et al.High bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AlN/GaN multilayers wit h a thin AlN/AlGaN buffer layer[J].Japanese Journal of Applied Physics,2003,42(3A):L226-L228.
[2] NAGAHAMA S,YANAMOTO T,SANO M,et al.Wavelength dependence of InGaN laser diode characteristics[J].Japanese Journal of Applied Physics,2001,40(5A):3075-3081.
[3] NAGAHAMA S,YANAMOTO T,SANO M,et al.Characteristics of InGaN laser diodes in t he pure blue region[J].Applied Physics Letters,2001,79(11):1948-1950.
[6] KAPOLNEK D,WU X H,HEYING B,et al.Structural evolution in epitaxial metalorganic chemical deposition grown GaN films on sapphire[J].Applied Physics Letters,1995,67(11):154l-1543.
[7] VALLANT Y M LE,BISARO T,OLIVER J,et al.Characterization of AlN buffer layers on (0001)-sapphire substrates[J].Materials Science and Engineering:B,1997,50(1):32 37.
[8] KATO Y,KITAMURA S,HIRAMATSU K,et al.Selective growth of wurtzite GaN and AlxGa1-x N on GaN/sapphire substrates by metalorganic vapor phase epitaxy[J].Journal of Crystal Growth,1994,144(3-4):133-140.
[9] FENG G,ZHENG X H,FU Y,et al.Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching[J].Journal of Crystal Growth,2002,240(3 4):368-372.
[10] CHEN W M,McNALLEN P J,JACOBS K,et al.Determination of crystal misorientation in epitaxial lateral overgrowth of GaN[J].Journal of Crystal Growth,2002,243(1):94-102.
