[8] M. Bashahu, P. Nkundabakura. Review and tests of methods for the determination of the solar cell junction ideality factors[J]. Solar Energy, 2007, 81(7): 856~863
[9] P. Mialhe, J. P. Charles, A. Khoury et al.. The diode quality factor of solar cells under illumination[J]. J. Phys. D: Appl. Phys., 1986, 19(3): 483~492
[11] Amit Jain, Avinashi Kapoor. A new method to determine the diode ideality factor of real solar cell using Lamber W-function[J]. Solar Energy & Solar Cell, 2005, 85(3): 391~396
[14] A. W. Blakers, M. A. Green. Oxidation condition dependence of surface passivation in efficiency silicon solar cells[J]. Appl. Phys. Lett., 1985, 47(8): 818~820
[15] Chengxin Wang, Guowei Wang, Hongwu Liu et al.. Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode[J]. Appl. Phys. Lett., 2004, 84(13): 2427~2429
[16] J. Deng, C. R. Wronski. Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of a-Si:H solar cells[J]. J. Appl. Phys., 2005, 98: 024509-1~024509-10