• Chinese Journal of Lasers
  • Vol. 35, Issue s1, 69 (2008)
Li Hongqi1、* and Wang Huimin2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Li Hongqi, Wang Huimin. A Method of Measuring Quality Factor and Reverse Saturated Current of Photovoltaic Detector PN Junction[J]. Chinese Journal of Lasers, 2008, 35(s1): 69 Copy Citation Text show less
    References

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    [11] Amit Jain, Avinashi Kapoor. A new method to determine the diode ideality factor of real solar cell using Lamber W-function[J]. Solar Energy & Solar Cell, 2005, 85(3): 391~396

    [14] A. W. Blakers, M. A. Green. Oxidation condition dependence of surface passivation in efficiency silicon solar cells[J]. Appl. Phys. Lett., 1985, 47(8): 818~820

    [15] Chengxin Wang, Guowei Wang, Hongwu Liu et al.. Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode[J]. Appl. Phys. Lett., 2004, 84(13): 2427~2429

    [16] J. Deng, C. R. Wronski. Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of a-Si:H solar cells[J]. J. Appl. Phys., 2005, 98: 024509-1~024509-10

    Li Hongqi, Wang Huimin. A Method of Measuring Quality Factor and Reverse Saturated Current of Photovoltaic Detector PN Junction[J]. Chinese Journal of Lasers, 2008, 35(s1): 69
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