• Acta Photonica Sinica
  • Vol. 31, Issue 3, 312 (2002)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE ANALYSIS ON THE RECIPROCAL SPACE MAPPING OF THE AlGaAs/GaAs EPITAXIAL LAYER IN THE TRANSPARENT GaAs PHOTOCATHODE[J]. Acta Photonica Sinica, 2002, 31(3): 312 Copy Citation Text show less
    References

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    [3] James R W.The Optics Principle of the Diffraction of X-rays,Ox Bow Press,Woodrige,CN,1962:20~65

    [4] Chu Ryang Wie.High resolution X-ray diffraction characterization of semiconductor structures.Materials Science and Engineering.1994,R13(1):1~54

    [5] Fewster P F.X-ray diffraction from low dimensional structures.Semicond Sci Technol,1993,8(10):1916~1917

    [6] Fewster P F.High-resolution diffraction-space mapping and topography.Appl Phys,1994,A58(1):121~127

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE ANALYSIS ON THE RECIPROCAL SPACE MAPPING OF THE AlGaAs/GaAs EPITAXIAL LAYER IN THE TRANSPARENT GaAs PHOTOCATHODE[J]. Acta Photonica Sinica, 2002, 31(3): 312
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