[1] Lang Chao, Yao Shun, Chen Bingzhen, et al.. “Smile” effect on the beam quality for diode laser arrays[J]. Chinese J Lasers, 2012, 39(5): 0502006.

[2] Fang Gaozhan, Ma Xiaoyu, Wang Guohong, et al.. Quasi-CW 17 kW 808 nm GaAs/AlGaAs stack laser diode arrays[J]. Chinese J Lasers, 2004, 31(6): 649-653.

[3] Zhang Jun, Shan Xiaonan, Liu Yun, et al.. Kilowatt-output and high beam quality diode laser linear array coupling source[J]. Chinese J Lasers, 2012, 39(2): 0202010.

[4] Liu Jiang, Wang Pu. High-power narrow-bandwidth continuous wave thulium-doped all fiber laser[J]. Chinese J Lasers, 2013, 40(1): 0102001.

[5] Li Jianjun, Han Jun, Deng Jun, et al.. InAlGaAs quantum well 808 nm laser diode with low threshold current and high efficiency[J]. Chinese J Lasers, 2006, 33(9): 1159-1162.

[6] Fang Gaozhan, Xiao Jianwei, Ma Xiaoyu, et al.. High power 808 nm AlGaAs/GaAs quantum well laser diodes with broad waveguide[J]. Chinese J Semiconductors, 2002, 23(8): 809-812.

[7] Norbert Lichtenstein, Martin Krejci, Yvonne Manz, et al.. Recent developments for BAR and BASE: setting the trends[C]. SPIE, 2008, 6876: 68760C.

[8] P Crump, G Blume, K Paschke, et al.. 20 W continuous wave reliable operation of 980 nm broad-area single emitter diode lasers with an aperture of 96 μm[C]. SPIE, 2009, 7198: 719814.

[9] Y Kokubo, I Ohta. Refractive index as a function of photon energy for AlGaAs between 1.2 and 1.8 eV[J]. J Appl Phys,1997, 81(4): 2042-2043.

[10] Li Jianjun, Chen Changhua, Lian Peng, et al.. A numerical method for analyzing multi-transverse modes of a complex index waveguide[J]. Acta Optica Sinica, 2001, 21(7): 800-803.

[11] Ling Bao, Jun Wang, Mark DeVito, et al.. Reliability of high performance 9xx-nm single emitter diode lasers[C]. SPIE, 2010, 7583: 758302.

[12] H C Casey, M B Panish. Heterostructure Lasers, Part A[M]. New York: Academic Press, 1978. 174-182.