• Acta Photonica Sinica
  • Vol. 41, Issue 6, 708 (2012)
JIN Chenjie1、2、3、*, LI Lifei1、3, REN Zhaoyu1、3, BAI Jintao1、2、3, BAI Yang1、3, and HE Qingli4
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    DOI: 10.3788/gzxb20124106.0708 Cite this Article
    JIN Chenjie, LI Lifei, REN Zhaoyu, BAI Jintao, BAI Yang, HE Qingli. KGW External Resonator High Power 579 nm Raman Yellow Laser[J]. Acta Photonica Sinica, 2012, 41(6): 708 Copy Citation Text show less

    Abstract

    The output characteristics of 579 nm high power resonator KGd(WO4)2 Raman yellow laser were reported. 579.54 nm yellow laser was generated based on 808nm pulse LD sidepumped ceramic Nd∶YAG, BBO electrooptical Qswitched and typeI critical phasematching LBO crystal extracavity frequency doubling project. With the 5.02 W, 10.1 ns and 1 kHz output power pumped at 532 nm, the laser produced high average power of 2.58 W and pulses of 7.4 ns duration secondStokes wavelength at 579.54 nm. Conversion efficiency was 51.4% and slope efficiency was 54.8%. The beam quality factors M2 of 579.54 nm were M2x-579.54=5.829, M2y-579.54=6.336 and power instability less than ±2.35%. Experimental results indicate that external resonator Raman structure is an effective method for obtaining Raman yellow laser with its high opticaltooptical conversion and good power stability. Moreover, the additional usage of pulse LD with synchronous electrooptical Qswitch could generate high repetition rate, high average power, narrow pulse width and high peak power yellow laser.
    JIN Chenjie, LI Lifei, REN Zhaoyu, BAI Jintao, BAI Yang, HE Qingli. KGW External Resonator High Power 579 nm Raman Yellow Laser[J]. Acta Photonica Sinica, 2012, 41(6): 708
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