Photocurrent effect of PDSOI NMOS device by laser simulation

REN Shangqing; WANG Bobo; JIANG Chunsheng; ZHONG Le; SUN Peng; XIE Lei

doi:10.11805/tkyda2019450

[2] KUO J B,SU K W. CMOS VLSI engineering[M]. Berlin:Springer, 1998.

[3] KUO J B,LIN S C. Fundamentals of SOI CMOS circuits[M]. [S.l.]:John Wiley & Sons, Inc., 2002.

[4] SCHWANK J R,SHANEYFELT M R,FLEETWOOD D M,et al. Radiation effects in MOS oxides[J]. IEEE Transactions on Nuclear Science, 2008,55(4):1833-1853.

[5] COLINGE J P. Silicon on insulator technology:materials to VLSI[M]. 2nd ed. Berlin:Springer, 1997.

[6] SCHWANK J R,FERLET-CAVROIS V,SHANEYFELT M R,et al. Radiation effects in SOI technologies[J]. IEEE Transactions on Nuclear Science, 2003,50(3):522-538.

[7] BARNABY H J,MCLAIN M L,ESQUEDA I S,et al. Modeling ionizing radiation effects in solid state materials and CMOS devices[J]. IEEE Transactions on Circuits & Systems I:Regular Papers, 2009,56(8):1870-1883.

[8] ELLIS T D,KIM Y D. Use of a pulsed laser as an aid to transient upset testing of I2L LSI micro circuits[J]. IEEE Transactions on Nuclear Science, 1978,25(6):1489-1493.

[10] LI Mo,SUN Peng,ZHANG Jian,et al. Research on laser radiation for simulating dose rate effects in semiconductor materials[C]// 2016 IEEE International Conference on Electronic Information and Communication Technology(ICEICT). Harbin,China: IEEE, 2016:540-543.

[11] SKOROBOGATOV P K,NIKIFOROV A Y,EGOROV A N. Optimization of laser irradiation parameters for simulation of a transient radiation response in thin-film silicon-based microcircuits[J]. Russian Microelectronics, 2015(44):8-21.

[13] HABING D H. The use of lasers to simulate radiation-induced transients in semiconductor devices and circuits[J]. IEEE Transactions on Nuclear Science, 1965,12(5):91-100.

[14] NIKIFOROV A Y,SKOROBOGATOV P K. Dose rate laser simulation tests adequacy: shadowing and high intensity effects analysis[J]. IEEE Transactions on Nuclear Science, 1996,43(6):3115-3121.

[15] WIRTH J L,ROGERS S C. The transient response of transistors and diodes to ionizing radiation[J]. IEEE Transactions on Nuclear Science, 1964,11(5):24-38.

[16] HOFFMAN J R,HALL W E,DUNN D E. Modeling transient radiation effects in power MOSFETs[J]. IEEE Transactions on Nuclear Science, 1987,34(6):1381-1385.

[17] LIANG Kun,SUN Peng,LI Mo,et al. Laser simulation technology research of transient dose rate effect in SOI device[J]. Atomic Energy Science and Technology, 2017,51(1):187-192.