• Acta Photonica Sinica
  • Vol. 34, Issue 4, 496 (2005)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 14xxnm Quantum Well Lasers with Tapered Gain Region[J]. Acta Photonica Sinica, 2005, 34(4): 496 Copy Citation Text show less
    References

    [1] Piprek P, White J K, Thorpe A J S. What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes. IEEE Journal of Quant Electron, 2002,38(9):1253 ~ 1259

    [2] Kintzer E S, et al. High-Power, Strained-Layer amplifiers and lasers with gapered Gain regions. IEEE Photon Technol Lett, 1993,5(6): 605~608

    [3] Selmic et al. Single frequency 1550 nm AlGaInAs-InP tapered high-power laser with a distribute Bragg reflector.IEEE Photon Technol Lett, 2002,14 (7): 890 ~ 892

    [4] Bruns W K, et al. Optical waveguide parabolic coupling horns. Appl Phys Lett, 1977,30(1): 28~30

    [5] Milton A F, Burns W K. Mode coupling in optical waveguide horns. IEEE Journal of Quant Electron, 1977,13 (10) :828 ~ 835

    [6] Mariojouls S, et al. Modeling of the performance of Highbrightness tapered lasers. SPIE, 2000,3944:395~406

    [7] Paul G,et al. Design of single-mode step-tapered waveguide sections. IEEE Journal of Quant Electron, 1987,23 (2):205 ~ 211

    [8] Donnelly J P, Walpole J N, Grove S H, et al. High-power 1.5 μm tapered-gain-region lasers. SPIE, 1998,3284: 54 ~ 62

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 14xxnm Quantum Well Lasers with Tapered Gain Region[J]. Acta Photonica Sinica, 2005, 34(4): 496
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