Study on Growth and Characteristics of Vertical-Cavity Surface-Emitting Laser Structure

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 34 >Issue 3 >Page 343 > Article

Acta Photonica Sinica
Vol. 34, Issue 3, 343 (2005)

Study on Growth and Characteristics of Vertical-Cavity Surface-Emitting Laser Structure

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Growth and Characteristics of Vertical-Cavity Surface-Emitting Laser Structure[J]. Acta Photonica Sinica, 2005, 34(3): 343 Copy Citation Text

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References

[1] Dae Ho Lim, Gye Mo Yang, Jong-Hee Kim, et al.SPIE,1998,3286:96～102

[2] Hagan O S, Missous M. Effect of As4/Ga flux ratio on electrical and optical properties of low-temperature GaAs grown by molecular beam epitaxy.1994,75(12): 7835～7841

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