Author Affiliations
1College of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, Jilin , China2Zhongshan Research Institute, Changchun University of Science and Technology, Zhongshan 528436, Guangdong , China3Guang Chi Technology (Shanghai) Co., Ltd., Shanghai 200444, China4Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, Jilin , China5Yunnan North Optical Technology Co., Ltd., Kunming 650216, Yunnan , Chinashow less
Fig. 1. F-P film structure diagram
Fig. 2. Optical constant curves of two materials. (a) SiO2; (b) Ta2O5
Fig. 3. Design curve of the film system
Fig. 4. Structure diagram of optical film thickness monitoring system
Fig. 5. SiO2 film monitoring curve
Fig. 6. Surface roughness changes before and after coating at different rates. (a) Ta2O5; (b) SiO2
Fig. 7. Variations of film surface roughness under different ion source energies. (a) Ta2O5; (b) SiO2
Fig. 8. Test spectral curve of the filter film
Fig. 9. Spectral curve of 44-layer dual-chamber membrane system
Fig. 10. Influence of thickness change of Ta2O5 on spectral curve of the film system. (a) Relative thikness of Ta2O5 is 0.9; (b) relative thickness of Ta2O5 is 0.95; (c) relative thickness of Ta2O5 is 1.05; (d) relative thickness of Ta2O5 is 1.1
Fig. 11. Influence of SiO2 thickness change on spectral curve of the film system. (a) Relative thickness of SiO2 is 0.9; (b) relative thickness of SiO2 is 0.95; (c) relative thickness of SiO2 is 1.05; (d) relative thickness of SiO2 is 1.1
Fig. 12. Debugging flow chart
Fig. 13. Relative sensitivity of each film layer in the film system
Fig. 14. Spectral curve after improvement
Parameter | Indicator |
---|
Central wave length /nm | 1304.58 | Angle of incidence /(°) | 5.4 | Passband /nm | 2.2 | Ripple within passband /dB | ≤0.2 | Maximum insertion loss within passband /dB | ≤0.2 | Reflection band /nm | 1260-(λc-3.2)&(λc+3.2)-1360 | Reflection isolation within passband /dB | >27 | Thickness /mm | <0.8 |
|
Table 1. Technical requirements for optical communication filter films
Material | Beam voltage /V | Beam current /mA | Accelerating voltage /V | Angle /(°) | E/B | O2 flow in gas tube 1/ (mL·min-1) | Ar flow in gas tube 2/ (mL·min-1) | Ar folw in gas tube 3/ (mL·min-1) |
---|
Ta2O5 | 1150 | 950 | 600 | 14 | 1.5 | 50 | 0 | 8 | SiO2 | 1150 | 950 | 600 | 14 | 1.5 | 50 | 0 | 8 |
|
Table 2. Ion source parameters
Material | Rate / (nm·s-1) | Temperature /℃ | Hearth speed /(r·min-1) | Flow / (mL·min-1) | Dome speed / (r·min-1) |
---|
Dome | Monitor | Wall |
---|
Ta2O5 | 0.4 | 200 | 200 | 150 | 1/1000 | 30 | 180 | SiO2 | 0.8 | 200 | 200 | 150 | 1/500 | 0 | 180 |
|
Table 3. Process parameters of two materials