• International Journal of Extreme Manufacturing
  • Vol. 3, Issue 4, 45103 (2021)
[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]1, and [in Chinese]1、*
Author Affiliations
  • 1Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People’s Republic of China
  • 2State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, School of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, People’s Republic of China
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    DOI: 10.1088/2631-7990/ac2296 Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Low voltage and robust InSe memristor using van der Waals electrodes integration[J]. International Journal of Extreme Manufacturing, 2021, 3(4): 45103 Copy Citation Text show less
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Low voltage and robust InSe memristor using van der Waals electrodes integration[J]. International Journal of Extreme Manufacturing, 2021, 3(4): 45103
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