• Semiconductor Optoelectronics
  • Vol. 44, Issue 1, 14 (2023)
ZHONG Yujie, YANG Hong*, YI Xuedong, WU Xuefei, GU Shunhu, and ZHANG Na
Author Affiliations
  • [in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2022082101 Cite this Article
    ZHONG Yujie, YANG Hong, YI Xuedong, WU Xuefei, GU Shunhu, ZHANG Na. 1M Frame Transfer CCD Image Sensor with Vertical Antiblooming[J]. Semiconductor Optoelectronics, 2023, 44(1): 14 Copy Citation Text show less

    Abstract

    Frame transfer charge coupled device (FTCCD) is mainly used for visible light detection, which is prone to bloom in strong light applications. To solve this problem, a frame transfer vertical anti-blooming CCD image sensor was developed. The array size of the device was 1024×1024 elements, and the pixel size was 12μm×12μm. In order to realize the vertical anti-blooming function, an n-type buried channel saddle p-well-n-type substrate structure was adopted. The vertical anti-blooming multiple is 200X, the full capacity is no less than 200ke-, the readout noise is no more than 80e-, and the dynamic range is no less than 2000∶1.
    ZHONG Yujie, YANG Hong, YI Xuedong, WU Xuefei, GU Shunhu, ZHANG Na. 1M Frame Transfer CCD Image Sensor with Vertical Antiblooming[J]. Semiconductor Optoelectronics, 2023, 44(1): 14
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