[1] M. S. Sze, Physics of Semiconductor Devices (2nd edition) (John Wiley & Sons, Singapore, 1981), p. 44, 637.
[2] C. H. Lee, IEEE Trans. on Electron Device 37, 2426 (1990).
[3] A. Rosen and F. Zutavern, in High-Power Optically Activated Solid-State Switches (Artech House, Norwood, 1994) Chap. 11.
[4] G. M. Loubriel and F. J. Zutavern, IEEE Trans. on Plasma Science 25, 124 (1997).
[5] T. C. H. Lee, in Picosecond Optoelectronic Devices (Academic Press, Orlando, 1984), Chap. 11.
[6] W. Shi, E. Z. Chen, X. B. Zhang, and Q. Li, Chin. Phys. Lett. 19, 1119 (2002).
[7] W. Shi, W. Zhao, Z. X. Liang, and X. W. Sun, Chin. Phys. Lett. 18, 1479 (2001).
[8] W. Shi, X. B. Zhang, Q. Li, E. Z. Chen, and W. Zhao, Chin. Phys. Lett. 19, 351 (2002).
[9] B. G. Bosch and R. W. H. Engelmann, Gunn-Effect Electronics (Pitman, Bath, 1975) p. 23.
[10] J. Singh, Semiconductor Optoelectronics: Physics and Technology (McGraw Hill, Singapore, 1995) p. 205, 265.
