Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes

Peng Zhou; Changjun Liao; Zhengjun Wei; Chunfei Li; Shuqiong Yuan

doi:10.3788/COL201109.010402

Journals >Chinese Optics Letters >Volume 9 >Issue 1 >Page 010402 > Article

Chinese Optics Letters
Vol. 9, Issue 1, 010402 (2011)

Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes

Peng Zhou¹, Changjun Liao², Zhengjun Wei², Chunfei Li¹, and Shuqiong Yuan²

Author Affiliations

¹Department of Physics, Harbin Institute of Technology, Harbin 150001, China

²Lab of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China

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DOI: 10.3788/COL201109.010402 Cite this Article Set citation alerts

Peng Zhou, Changjun Liao, Zhengjun Wei, Chunfei Li, Shuqiong Yuan. Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes[J]. Chinese Optics Letters, 2011, 9(1): 010402 Copy Citation Text

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Abstract

We examine the saturation of relative current gain of In0.53Ga0.47As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.

Keywords

040.1345 040.3060 040.5160 040.5570

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