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    Journals >Chinese Optics Letters >Volume 9 >Issue 1 >Page 010402 > Article
    • Chinese Optics Letters
    • Vol. 9, Issue 1, 010402 (2011)
    Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes
    Peng Zhou1, Changjun Liao2, Zhengjun Wei2, Chunfei Li1, and Shuqiong Yuan2
    Author Affiliations
  • 1Department of Physics, Harbin Institute of Technology, Harbin 150001, China
  • 2Lab of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China
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    DOI: 10.3788/COL201109.010402 Cite this Article Set citation alerts
    Peng Zhou, Changjun Liao, Zhengjun Wei, Chunfei Li, Shuqiong Yuan. Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes[J]. Chinese Optics Letters, 2011, 9(1): 010402 Copy Citation Text show less
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    Article index updated: Mar. 8, 2024
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    The article is cited by 5 article(s) from Web of Science.
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    Peng Zhou, Changjun Liao, Zhengjun Wei, Chunfei Li, Shuqiong Yuan. Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes[J]. Chinese Optics Letters, 2011, 9(1): 010402
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