[1] Rogalski A. New Material Systems for Third Generation Infrared Photodetectors[J]. OptoElectronics Review, 2008, 16(4): 458482.
[3] Ting D Z-Y, Soibel A, Hglund L, et al. Type-II Superlattice Infrared Detectors[M]//Gunapala S D.Advances in Infrared Photodetectors. Amsterdam: Elesvier, 2011.
[4] Razeghi M. Overview of Antimonide Based III-V Semiconductor Epitaxial Layers and Their Applications at the Center for Quantum Devices[J]. European Physica Journal-Applied Physics, 2003, 23(3): 149205.
[5] Manurkar P, Ramezani-Darvish S, Nguyen B-M, et al. High Performance Long Wavelength Infrared Mega-pixel Focal Plane Array Based on Type-II Superlattices[J]. Applied Physics Letter, 2010, 97: 193505.
[6] Dutta P S, Bhat H L, Kumar V. The Physics and Technology of Gallium Antimonide: An Emerging Optoelectronic material[J]. Journal of Applied Physics, 1997, 81(9): 58215870.
[7] Furlong M J, Martinez R, Amirhaghi S, et al. Antimonide Based Infrared Materials: Developments in InSb and GaSb Substrate Technologies;;[C]. Takamatsu: 22nd International Conference on Indium Phosphide and Related Materials (IPRM): 2010.
[8] Furlong M J, Martinez R, Amirhaghi S, et al. Epitaxy Ready 4" GaSb Substrates: Requirements for MBE Grown Type-II Superlattice Infrared Detectors[C]. SPIE, 2010, 7660: 76601K.
[9] Furlong M J, Martinez R, Amirhaghi S, et al. Multiwafer Production of Epitaxy Ready 4" GaSb Substrates: Requirements for Epitaxially Growth Infrared Detectors[C]. SPIE, 2012, 8268: 826818.
[10] Allen L P, Flint J P, Meschew G, et al.100 mm Diameter GaSb Substrates with Extended IR Wavelength for Advanced Space Based Applications[C]. SPIE, 2011, 8012: 801215.
[14] Jackson E M, Boishin E I, Aifer E H, et al. Arsenic Cross-contamination in GaSb/InAs Superlattices[J]. Journal of Crystal Growth, 2004, 270: 301308.
[15] Hu Y N, Tam M C, Wasilewski Z R. Unintentional As Incorporation into AlSb and Interfacial Layers within InAs/AlSb Superlattices[J]. Journal of Vacuum Science & Technology B, 2019, 37(3): 032902.