• Acta Photonica Sinica
  • Vol. 34, Issue 6, 909 (2005)
1,2, 1, 1, and 3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Study of the Growth of GaInP2 Materials on Ge Substrate[J]. Acta Photonica Sinica, 2005, 34(6): 909 Copy Citation Text show less
    References

    [2] Yoshino J, Iwamoto T,Kwkimoto H,et al. The study of GaInP on GaAs sustrate. J Appl Phys,1981,20(4):290~292

    [3] Friedman D,Olson.J M.Analysis of Ge junctions for GaInP/GaAs/Ge three-junction solar cells.Progress in Photovoltaics: Research and Applications, 2001,9(3):179~189

    [4] Ting S M, Fitzgerald E A,Sieg R M,et al.Range of Defect Morphologies on GaAs Grown on Offcut (001) Ge Substrates. Journal of Electronic Materials,1998, 27(5):451~461

    [5] Modak P,Dhont M,Mijlemans D,et al.(Al)GaInP Multiquantum Well LEDS on GaAs and Ge. Journal of Electronic Materials, 2000,29(4):80~84

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Study of the Growth of GaInP2 Materials on Ge Substrate[J]. Acta Photonica Sinica, 2005, 34(6): 909
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