The Study of the Growth of GaInP2 Materials on Ge Substrate

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 34 >Issue 6 >Page 909 > Article

Acta Photonica Sinica
Vol. 34, Issue 6, 909 (2005)

The Study of the Growth of GaInP₂ Materials on Ge Substrate

[in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, and [in Chinese]³

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Study of the Growth of GaInP₂ Materials on Ge Substrate[J]. Acta Photonica Sinica, 2005, 34(6): 909 Copy Citation Text

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Abstract

GaInP_2 materials had been obtained on Ge substrate (100) toward (110)miscut 9 degree by a home-made low pressure MOCVD system.Its growth condition was investigated,and the testing results show that growth temperature, Ⅴ/Ⅲ ratio and growth speed influence on surface morphology and solid composition of GaInP_2.The measurements indicate that growth temperature should be 650～680℃, Ⅴ/Ⅲ ratio should be 180～220, growth speed 25～35 nm/min. And the results shows that the nearly similar performance of GaInP_2 is obtained on both GaAs and Ge substrate.

Keywords

Ge Material GaInP₂ Ge LP-MOCVD LP-MOCVD GaInP_2

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Study of the Growth of GaInP₂ Materials on Ge Substrate[J]. Acta Photonica Sinica, 2005, 34(6): 909

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