Research on 220 GHz Low Noise Amplifiers

Yan-fei MAO; Shi-ju E; Klaus SCHMALZ; John SCHEYTT

doi:10.3969/j.issn.1672-8785.2019.08.004

[1] Song H J, Kim J Y, Ajito K, et al. 50-Gb/s Direct Conversion QPSK Modulator and Demodulator MMICs for Terahertz Communications at 300 GHz［J］. IEEE Transactions on Microwave Theory and Techniques, 2014, 62(3):600-609.

[2] Hamada H, Kosugi T, Song H J, et al. 300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs［C］. New Orleans: 2015 IEEE Compound Semiconductor Integrated Circuit Symposium(CSICS), 2015.

[3] Katayama K, Takano K, Amakawa S, et al. CMOS 300-GHz 64-QAM Transmitter［C］. San Francisco: 2016 IEEE MTT-S International Microwave Symposium(IMS), 2016.

[4] Sarmah N, Grzyb J, Statnikov K, et al. A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology［J］. IEEE Transactions on Microwave Theory and Techniques, 2016, 64(2): 562-574.

[5] Rodríguez-Vázquez P, Grzyb J, Sarmah N, et al. A 65 Gbps QPSK One Meter Wireless Link Operating at a 225-255 GHz Tunable Carrier in a SiGe HBT Technology［C］. Anaheim: 2018 IEEE Radio and Wireless Symposium(RWS), 2018.

[6] Elkhouly M, Mao Y F, Meliani C, et al. A 245 GHz ASK Modulator and Demodulator with 40 Gbits/sec Data Rate in 0.13 m SiGe BiCMOS Technology［C］. Seattle: 2013 IEEE MTT-S International Microwave Symposium Digest(MTT), 2013.

[7] Elkhouly M, Mao Y F, Meliani C, et al. A G-Band Four-element Butler Matrix in 0.13 m SiGe BiCMOS Technology［J］. IEEE Journal of Solid-State Circuits, 2014, 49(9):1916-1926.

[8] Elkhouly M, Mao Y F, Glisic S, et al. A 240 GHz Direct Conversion IQ Receiver in 0.13 m SiGe BiCMOS Technology［C］. Seattle: 2013 IEEE Radio Frequency Integrated Circuits Symposium(RFIC), 2013.

[9] Song H J, Kosugi T, Hamada H, et al. Demonstration of 20-Gbps Wireless Data Transmission at 300 GHz for KIOSK Instant Data Downloading Applications with InP MMICs［C］. San Francisco: 2016 IEEE MTT-S International Microwave Symposium(IMS), 2016.

[10] Ojefors E, Heinemann B, Pfeiffer U R. Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-ends［J］. IEEE Transactions on Microwave Theory and Techniques, 2012, 60(5): 1397-1404.

[11] Yoon D, Kim N, Pfeiffer U, et al. A Wide Band 215-255 GHz CB Differential Amplifier in a 0.25 m SiGe HBT Technology［C］. Seoul: 2013 Asia-Pacific Microwave Conference(APMC), 2013.

[12] Schmalz K, Borngraber J, Mao Y F, et al. A 245 GHz LNA in SiGe Technology［J］. IEEE Microw Wireless Components Letters, 2012,22(10): 533-535.

[13] Malz S, Heinemann B, Pfeiffer U R. A 233-GHz Low Noise Amplifier with 22.5 dB Gain in 0.13 m SiGe［C］. Rome: 9th European Microwave Integrated Circuit Conference(EuMIC), 2014.