• Chinese Journal of Lasers
  • Vol. 41, Issue 3, 317001 (2014)
Chen Daiyao*, Yu Xuecai, Wang Pinghe, and Liu Yong
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/cjl201441.0317001 Cite this Article Set citation alerts
    Chen Daiyao, Yu Xuecai, Wang Pinghe, Liu Yong. Study of the Influence of Cliff Layer on Uni-Traveling-Carrier Photodetector[J]. Chinese Journal of Lasers, 2014, 41(3): 317001 Copy Citation Text show less
    References

    [1] Liu Shaoqing, Han Qin, Yang Xiaohong, et al.. Fabrication and characterization of high speed and high efficiency photodetector[J]. Laser & Optoelectronics Progress, 2012, 49(2): 022301.

    [2] Tang Hengjing, Li Yongfu, Li Xue, et al.. Experimental study on polarization dependent response of InGaAs photodetector[J]. Laser & Optoelectronics Progress, 2011, 48(4): 040401.

    [3] Xie Sanxian, Huang Yongqing, Liu Qing, et al.. Theoretical analysis of quantum efficiency of novel dual-absorption photodetector[J]. Laser & Optoelectronics Progress, 2011, 48(5): 052301.

    [4] Ishibashi T, Kodama S, Shimizu N, et al.. High-speed response of uni-traveling-carrier photodiodes[J]. Jpn J Appl Phys, 1997, 36(10): 6263-6268.

    [5] Ishibashi T, Furuta T, Fushimi H, et al.. InP/InGaAs uni-traveling-carrier photodiodes[J]. IEICE Trans Electron, 2000, E83-C(6): 938-949.

    [6] Ito H, Kodama S, Muramoto Y, et al.. High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes[J]. IEEE J Sel Top Quantum Electron, 2004, 10(4): 709-727.

    [7] Wang X, Duan N, Chen H, et al.. InGaAs-InP photodiodes with high responsivity and high saturation power[J]. IEEE Photon Technol Lett, 2007, 19(16): 1272-1274.

    [8] Chtioui M, Enard A, Carpentier D, et al.. High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links[J]. IEEE Photon Technol Lett, 2008, 20(3): 202-204.

    [9] Tuo Shi, Bing Xiong, Changzheng Sun, et al.. Study on the saturation characteristics of high-speed uni-travelling-carrier photodiodes based on field screening analysis[J]. Chin Opt Lett, 2011, 9(8): 082302.

    [10] X Li, N Li, S Demiguel, et al.. A partially depleted absorber photodiode with graded doping injection regions[J]. IEEE Photon Technol Lett, 2004, 16(10): 2326-2328.

    [11] Mourad Chtioui, Francois Lelarge, Alain Enard, et al.. High responsivity and high power UTC and MUTC GaInAs-InP photodiodes[J]. IEEE Photon Technol Lett, 2012, 24(4): 318-320.

    [12] N Li, X Li, S Demiguel, et al.. High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode[J]. IEEE Photon Technol Lett, 2004, 16(3): 864-866.

    [13] H Pan, A Beling, H Chen, et al.. Characterization and optimization of high-power InGaAs/InP photodiodes[J]. Opt Quantum Electron, 2008, 40(1): 41-46.

    [14] Z Li, H P Pan, H Chen, et al.. High-saturation-current modified uni-traveling-carrier photodiode with cliff layer[J]. IEEE J Quantum Electron, 2010, 46(5): 626-632.

    [15] Zhang Lingzi, Zuo Yuhua, Cao Quan, et al.. High-speed and high-power uni-traveling-carrier photodetector[J]. Acta Physica Sinica, 2012, 61(13): 138501.

    [16] Srivastava S. Simulation Study of InP-Based Uni-Traveling-Carrier Photodiode[D]. Cincinnati: University of Cincinnati, 2003. 129-133.

    [17] Santa Clara. ATLAS Users Manual[M]. Santa Clara: Silvaco International, 2008.

    Chen Daiyao, Yu Xuecai, Wang Pinghe, Liu Yong. Study of the Influence of Cliff Layer on Uni-Traveling-Carrier Photodetector[J]. Chinese Journal of Lasers, 2014, 41(3): 317001
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