The design and fabrication of a novel Bragg reflection-type thin film bulk acoustic wave (BAW) filter is investigated in this work. In BAW devices, Y43° lithium niobate single crystal thin film (Y43°-LN) with high electromechanical coupling coefficient was selected as the piezoelectric material and the Benzocyclobutene (BCB) was used as wafer bonding layer. The Y43°-LN monocrystalline thin film with submicron thickness was transferred to the substrate with Bragg reflection layer by the crystal-ion-slicing method. As both the bonding layer and the first low impedance layer of Bragg reflector, BCB is used to prepare the single crystal BAW filter. The third-order BAW filter wwith the central frequency of 2.93 GHz, absolute bandwidth and fractional bandwidth of 247 MHz and 8.4% respectively is designed and fabricated. The results indicate that the high electromechanical coupling coefficient LN single crystal thin film prepared by film transfer technology can realize the preparation of large-bandwidth BAW filter.