[1] Yen H, Kuo H, Yeh W. Characteristics of single-chip GaN-based alternating current light-emitting diode. Japanese Journal of Applied Physics, 2008, 47(12): 8808–8810
[2] EIA/JEDEC STANDARD Integrated Circuits Thermal Measure-ment Method -Electrical Test Method (Single Semiconductor Device). 1995
[3] Xi Y, Schubert E F. Junction – temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method. Applied Physics Letters, 2004, 85(12): 2163–2165
[4] Shin M W, Jang S H. Thermal analysis of high power LED packages under the alternating current operation. Solid-State Electronics, 2012, 68: 48–50
[5] Liu Y, Jayawardena A, Klein T R, Narendran N. Estimating the junction temperature of AC LEDs. Proceedings of SPIE, 2010, 7784: 778409
[6] Jayawardena A, Liu Y, Narendran N. Analysis of three different junction temperature estimation methods for AC LEDs. Solid-State Electronics, 2013, 86: 11–16
[7] Keppens A, Ryckaert W R, Deconinck G, Hanselaer P. High power light-emitting diode junction temperature determination from current-voltage characteristics. Journal of Applied Physics, 2008, 104(9): 093104
[8] WuB,LinS,ShihTM,GaoY,LuY,ZhuL,ChenG,ChenZ. Junction-temperature determination in InGaN light-emitting diodes using reverse current method. IEEE Transactions on Electron Devices, 2013, 60(1): 241–245
[9] Neamen D A. Semiconductor Physics and Devices Basic Principles. 3rd ed. New York: McGraw-Hill, 2003
[10] Poppe A, Siegal B, Farkas G. Issues of thermal testing of AC LEDs. In: Proceedings of 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, 2011, 297–303