Qun Tan, Jieqing Fan, Qiang Zhao, Fang Zhang, Yao Li, Jianhong Hao, Zhiwei Dong. Three-dimensional Monte Carlo simulation of electron radiation effects on CCD[J]. High Power Laser and Particle Beams, 2022, 34(4): 044004
- High Power Laser and Particle Beams
- Vol. 34, Issue 4, 044004 (2022)
Fig. 1. Simplified image of pixel array of electron irradiation on CCD
Fig. 2. Trajectories of electrons in silicon at the electron energy of 1 MeV
Fig. 3. Schematic diagram of photon generation in silicon
Fig. 4. Energy deposition of electrons in silicon at the electron energy of 1 MeV
Fig. 5. Range of electrons in silicon and silicon dioxide
Fig. 6. Energy deposition of CCD pixel irradiated by the 30 keV electron beam
Fig. 7. Energy deposition of CCD pixel irradiated by 5 keV to 1 MeV electron beams
Fig. 8. Energy deposition in pixel 2
Fig. 9. Energy deposition in pixel 3
Fig. 10. Comparison results of DPA in pixel 2 with and without boundary
Fig. 11. Trajectories of electrons in CCD without and with boundary
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Table 1. Stopping power of silicon to electron
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Table 2. Stopping power of silicon dioxide to electron
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