• High Power Laser and Particle Beams
  • Vol. 32, Issue 7, 071002 (2020)
Hao Liu1, Ping Ma2, Yunti Pu2, and Zuzhen Zhao1
Author Affiliations
  • 1Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057, China
  • 2Research Center of Laser Fusion, CAEP, P. O. Box 919-988, Mianyang 621900, China
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    DOI: 10.11884/HPLPB202032.200006 Cite this Article
    Hao Liu, Ping Ma, Yunti Pu, Zuzhen Zhao. Impact of annealing on laser resistance of HfO2 films fabricated byALD, IBS and EBE techniques[J]. High Power Laser and Particle Beams, 2020, 32(7): 071002 Copy Citation Text show less
    Schematic of the IBS and ALD equipments
    Fig. 1. Schematic of the IBS and ALD equipments
    Test benches for LIDT
    Fig. 2. Test benches for LIDT
    Dispersion of HfO2 films deposited by different techniques
    Fig. 3. Dispersion of HfO2 films deposited by different techniques
    0% LIDT of different HfO2 films
    Fig. 4. 0% LIDT of different HfO2 films
    Laser damage probabilities of different HfO2 films
    Fig. 5. Laser damage probabilities of different HfO2 films
    The laser damage probability of 500 ℃ annealed ALD HfO2 film irradiated by 10 pulses and 10 000 pulses
    Fig. 6. The laser damage probability of 500 ℃ annealed ALD HfO2 film irradiated by 10 pulses and 10 000 pulses
    Laser damage morphologies
    Fig. 7. Laser damage morphologies
    Impact of defect on the local temperature in the defect-induced laser damage model
    Fig. 8. Impact of defect on the local temperature in the defect-induced laser damage model
    sampleas-deposited/10−6300 ℃ annealed/10−6500 ℃ annealed/10−6
    ALD HfO2 film 13.219.11 800
    Table 1. The weak absorption of ALD HfO2 film annealed at different temperature
    Hao Liu, Ping Ma, Yunti Pu, Zuzhen Zhao. Impact of annealing on laser resistance of HfO2 films fabricated byALD, IBS and EBE techniques[J]. High Power Laser and Particle Beams, 2020, 32(7): 071002
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