• Acta Photonica Sinica
  • Vol. 34, Issue 3, 372 (2005)
[in Chinese]
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese]. A New Type High Power Lighting Emitting Diodes Based on MCPCB and its Opto-electrical Characteristics[J]. Acta Photonica Sinica, 2005, 34(3): 372 Copy Citation Text show less
    References

    [1] Daniel A S, Jerome C B, Dave C, et al.Illumination with solid state lighting technology.IEEE Journal on Selected Topics in Quantum Electronics, 2002,8(2): 310~320

    [4] Hsa Y.P,Chang S J,Su Y K,et al.InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates.Journal of Electronic Materials, 2003,32(5):403~406

    [6] Barton D L, Osinski M, Perlin P,et al.Single-quantum well InGaN green light emitting diode degration under high electrical. Microelectronics Reliability, 1999, 39: 1219~1227

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    [in Chinese]. A New Type High Power Lighting Emitting Diodes Based on MCPCB and its Opto-electrical Characteristics[J]. Acta Photonica Sinica, 2005, 34(3): 372
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