Pb(Zr0.3Ti0.7)O3 (PZT) ferroelectric thin films are grown by pulsed laser deposition (PLD) on LaSrAlTaO3 (LSAT) single crystal substrates from sintered targets of Pb(Zr0.3Ti0.7)O3 and Pb1.1(Zr0.3Ti0.7)O3 (excessive 10%-Pb) with variable temperature of 550～750 ℃, respectively. The pattern observed by X-ray diffraction (XRD) indicates that the orientation of thin film growth transits from approximate c-axis at 550 ℃ to approximate a-axis at 750 ℃ gradually in the no-excessive situation. But in the lead excessive situation, the thin film growth has no obvious transition change. Surface morphology measured by atomic force microscopy (AFM) demonstrates that the root-mean-square (RMS) roughnesses are 16.9 nm and 13.7 nm respectively when the PZT films are grown of approximate c-axis and a-axis. But in the mixed growth orientation, the RMS roughness was about 68 nm due to the competition growth.