• Photonics Research
  • Vol. 3, Issue 3, 54 (2015)
Yiguo Chen1、2, Xiong Li3, Xiangang Luo3, Stefan A. Maier2, and Minghui Hong1、*
Author Affiliations
  • 1Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore
  • 2The Blackett Laboratory, Physics Department, Imperial College London, London SW7 2AZ, UK
  • 3State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China
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    DOI: 10.1364/PRJ.3.000054 Cite this Article Set citation alerts
    Yiguo Chen, Xiong Li, Xiangang Luo, Stefan A. Maier, Minghui Hong. Tunable near-infrared plasmonic perfect absorber based on phase-change materials[J]. Photonics Research, 2015, 3(3): 54 Copy Citation Text show less

    Abstract

    A tunable plasmonic perfect absorber with a tuning range of 650 nm is realized by introducing a 20 nm thick phase-change material Ge2Sb2Te5 layer into the metal–dielectric–metal configuration. The absorption at the plasmonic resonance is kept above 0.96 across the whole tuning range. In this work we study this extraordinary optical response numerically and reveal the geometric conditions which support this phenomenon. This work shows a promising route to achieve tunable plasmonic devices for multi-band optical modulation, communication, and thermal imaging.
    ϵeff(λ)1ϵeff(λ)+2=m×ϵc(λ)1ϵc(λ)+2+(1m)×ϵa(λ)1ϵa(λ)+2,(1)

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    Yiguo Chen, Xiong Li, Xiangang Luo, Stefan A. Maier, Minghui Hong. Tunable near-infrared plasmonic perfect absorber based on phase-change materials[J]. Photonics Research, 2015, 3(3): 54
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