The thin films of Sb-doped Silicon Quantum Dots (Si-QDs) embedded in Si3N4 matrix were prepared by using muti-target radio frequency magnetron sputtering deposition technique combined with a rapid thermal process. The microstructure and luminescence properties of the films were studied by transmission electron microscopy, grazing incidence X-ray diffraction, Raman spectroscopy and photoluminescence spectroscopy. The effect of Sb doping on the microstructure and luminescent properties of Si-QDs films was discussed. The results show that the Sb-doping films exhibit obvious Sb-induced crystallization effect in annealing process. The doping of Sb contributes to the diffusion of Si atoms in the Si3N4 matrix and formation of Si-QDs. With the rise of Sb doping amount, the size of Si-QDs gradually is enlarged, and the crystallinity Xc of the films increases effectively. As Sb doping amount rises, the intensity of the PL peaks of the Si-QDs films enhances, and the full width at half maximum of the peaks becomes narrower. Meanwhile, due to the rise of the Si-QDs size, a red-shift is observed in the films with higher Sb doping density.