• Semiconductor Optoelectronics
  • Vol. 44, Issue 4, 556 (2023)
SU Jiangsen1, WU Youzhi1、*, ZOU Wenjing1, and ZHANG Cairong2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2023050802 Cite this Article
    SU Jiangsen, WU Youzhi, ZOU Wenjing, ZHANG Cairong. Mechanism of Liqs “N-Type Doping” in Alq Based Organic Light-Emitting Diodes[J]. Semiconductor Optoelectronics, 2023, 44(4): 556 Copy Citation Text show less

    Abstract

    Electron-only devices with different structures were prepared by doping Liq (8-hydroxyquinolinato-lithium) into the electron transport layer Alq (tris(8-hydroxyquinolinato) aluminum). The experimental results show that the electrical properties of doped devices are inferior to those of non-doped devices with Liq/Al composite cathodes and superior to those of non-doped devices with Al only cathodes. This indicates that Liq’s doped with Alq does not show any significant “n-doping” effect. The effect exhibits dual roles: Liq molecules dispersed at the Alq/Al cathode interfaces after doping display as electron injection layers, which enhances the device currents by enhancing electron injection; those in the bulk of Alq after doping have a detrimental effect on electron transport due to their own poor conductivity, consequently decrease the device currents. In the tests of electroluminescent devices, the doping of Liq shows a similar behavior. The performance of Liq-doped device is between the non-doped devices with Liq/Al cathode and Al cathode structures, with maximum current efficiencies of 3.96, 4.27 and 2.27 cd/A for the three devices, respectively, and no additional changes caused by charge transfer are observed in the absorption and photoluminescent spectra.
    SU Jiangsen, WU Youzhi, ZOU Wenjing, ZHANG Cairong. Mechanism of Liqs “N-Type Doping” in Alq Based Organic Light-Emitting Diodes[J]. Semiconductor Optoelectronics, 2023, 44(4): 556
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