Package Technique for CW 40 W 808 nm Quantum-well Linear Array Diode Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 29 >Issue 6 >Page 513 > Article

Chinese Journal of Lasers
Vol. 29, Issue 6, 513 (2002)

Package Technique for CW 40 W 808 nm Quantum-well Linear Array Diode Laser

[in Chinese]^1、2、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Package Technique for CW 40 W 808 nm Quantum-well Linear Array Diode Laser[J]. Chinese Journal of Lasers, 2002, 29(6): 513 Copy Citation Text

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References

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[2] C. Hanke, L. Korte, B. Acklin et al.. Highly reliable 40 W-CW-InGaAlAs/GaAs 808 nm laser bars [C]. SPIE, 1999, 3462:47～53

[3] J. Jandeleit, N. Wiedmann, A. Ostlender et al.. Packaging and characterization of high power diode lasers [C]. SPIE, 2000, 3945:270～277

[5] T. Ebert, J. Beiesenbach, H. G. Treusch et al.. Optimization of micro channel heat sink for high power diode laser in copper technology [C]. SPIE, 1998, 3285:25～30