Few-layer MoS2 grown by chemical vapor deposition as a passive Q-switcher for tunable erbium-doped fiber lasers

Handing Xia; Heping Li; Changyong Lan; Chun Li; Jinbo Du; Shangjian Zhang; Yong Liu

doi:10.1364/PRJ.3.000A92

Journals >Photonics Research >Volume 3 >Issue 3 >Page A92 > Article

Photonics Research
Vol. 3, Issue 3, A92 (2015)

Few-layer MoS₂ grown by chemical vapor deposition as a passive Q-switcher for tunable erbium-doped fiber lasers

Handing Xia, Heping Li^*, Changyong Lan, Chun Li, Jinbo Du, Shangjian Zhang, and Yong Liu

Author Affiliations

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China

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DOI: 10.1364/PRJ.3.000A92 Cite this Article Set citation alerts

Handing Xia, Heping Li, Changyong Lan, Chun Li, Jinbo Du, Shangjian Zhang, Yong Liu. Few-layer MoS₂ grown by chemical vapor deposition as a passive Q-switcher for tunable erbium-doped fiber lasers[J]. Photonics Research, 2015, 3(3): A92 Copy Citation Text

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