In order to increase the optical output power of semiconductor superluminescent devices, a direct coupling method has been used to monolithically integrate the superluminescent diode (SLD) with a semiconductor optical amplifier (SOA). By this means, a 1.3 μm InGaAsP/InP integrated superluminescent light sources have been fabricated. 50 mW superluminescent output power is obtained in pulsed condition. The spectral width at full width at half maximum (FWHM) is 28.9 nm, the optical gain of SOA is about 19 dB.