[2] Wang W, Hu S, Wang Z, et al. Exploring heteroepitaxial growth and electrical properties of -Ga2O3 films on differently oriented sapphire substrates [J]. Journal of Semiconductors, 2023, 44(6): 50-55.
[3] Sun X Y, Wang Z P, Gong H H, et al. M-plane -Ga2O3 solar-blind detector with record-high responsivity-bandwidth product and high-temperature operation capability [J]. IEEE Electron Device Letters, 2022, 43(4): 541-544.
[4] Lee M, Yang M, Lee H Y, et al. The growth of HVPE -Ga2O3 crystals and its solar-blind UV photodetector applications [J]. Materials Science in Semiconductor Processing, 2020, 123(22): 105565.
[5] Boldbaatar S, Janardhanam V, Zumuukhorol M, et al. Temperature-dependent Schottky diode behavior of Ni Schottky contacts to -Ga2O3 film epitaxially grown on sapphire substrate [J]. Materials Science in Semiconductor Processing, 2023, 163: 107589.
[6] Gottschalch V, Merker S, Blaurock S, et al. Heteroepitaxial growth of -, -, - and -Ga2O3 phases by metalorganic vapor phase epitaxy [J]. Journal of Crystal Growth, 2019, 510: 76-84.
[7] Sun H, Li K H, Castanedo C G T, et al. HCl flow-induced phase change of -, -, and -Ga2O3 films grown by MOCVD [J]. Crystal Growth & Design, 2018, 18(4): 2370-2376.
[8] Wang X, Mu W, Xie J, et al. Rapid epitaxy of 2-inch and high-quality -Ga2O3 films by mist-CVD method [J]. Journal of Semiconductors, 2023, 44(6): 56-62.
[9] Takane H, Kaneko K, Ota Y, et al. Initial nucleation scheme of Ga2O3 on (0001) sapphire by mist CVD for the growth of -phase [J]. Japanese Journal of Applied Physics, 2022, 61(9): 099301.
[10] Yao Y, Okur S, Lyle L A M, et al. Growth and characterization of -, -, and -phases of Ga2O3 using MOCVD and HVPE techniques [J]. Materials Research Letters, 2018, 6(5): 268-275.
[11] Ning P, Grmbel J, Blaesing J, et al. Lattice vibrations and optical properties of -Ga2O3 films grown by halide vapor phase epitaxy [J]. Semiconductor Science and Technology, 2020, 35(9): 095001.
[14] Pozina G, Hsu C W, Abrikossova N, et al. Numerical modelling for the experimental improvement of growth uniformity in a halide vapor phase epitaxy reactor for manufacturing -Ga2O3 layers [J]. Crystals, 2022, 12(12): 1790.
[17] Li Q, Zhang Y, Ji B, et al. Improvement of SiC deposition uniformity in CVD reactor by showerhead with baffle [J]. Journal of Crystal Growth, 2023, 615: 127-255.
[18] Zhang Z, Fang H, Yan H, et al. Influencing factors of GaN growth uniformity through orthogonal test analysis [J]. Applied Thermal Engineering, 2015, 91: 53-61.
