Development of Large Dynamic and High Sensitivity 1024&#215;1024 EMCCD

WANG Chaomin; YIN Jun; JIANG Haibo; WANG Tingdong; LIU Changlin; DING Jinsong

doi:10.16818/j.issn1001-5868.2022102802

Journals >Semiconductor Optoelectronics >Volume 44 >Issue 2 >Page 172 > Article

Semiconductor Optoelectronics
Vol. 44, Issue 2, 172 (2023)

Development of Large Dynamic and High Sensitivity 1024×1024 EMCCD

WANG Chaomin^*, YIN Jun, JIANG Haibo, WANG Tingdong..., LIU Changlin and DING Jinsong|Show fewer author(s)

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DOI: 10.16818/j.issn1001-5868.2022102802 Cite this Article

WANG Chaomin, YIN Jun, JIANG Haibo, WANG Tingdong, LIU Changlin, DING Jinsong. Development of Large Dynamic and High Sensitivity 1024×1024 EMCCD[J]. Semiconductor Optoelectronics, 2023, 44(2): 172 Copy Citation Text

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References

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[3] Gajar S A, Burke B E. Charge amplification by impact ionization in charge-coupled devices[J]. IEEE Trans. Electron Devices, 1988, 35: 2435-2436.

[4] Hynecek J. CCM-a new low-noise charge carrier multiplier suitable for detection of charge in small pixel CCD image sensors[J]. IEEE Trans. Electron Devices, 1992, 39: 1972-1975.

[5] Hynecek J, Nishiwaki T. Excess noise and other important characteristics of low light level imaging using charge multiplying CCDs[J]. IEEE Trans. Electron Devices, 2003, 50: 239-245.

[6] Robbins M S, Hadwen B J. The noise performance of electron multiplying charge-coupled devices[J]. IEEE Trans. Electron Devices, 2003, 50: 1227-1232.

WANG Chaomin, YIN Jun, JIANG Haibo, WANG Tingdong, LIU Changlin, DING Jinsong. Development of Large Dynamic and High Sensitivity 1024×1024 EMCCD[J]. Semiconductor Optoelectronics, 2023, 44(2): 172

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