In this paper, the theoretical design for the quantum well lasers with vertically integrated passive waveguides, which decreases the vertical beam divergence effectively, are reported. Through numerical calculation and analysis, the effects of structure parameters on far field pattern and threshold current density are studied. The calculated results show that the beam divergence can be greatly improved at the expense of only a slight increase of the threshold current density. An optimized structure for 980 nm InGaAs/AlGaAs quantum well lasers, which has a vertical beam divergence of 21°, was obtained.